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Magnetoresistive structures with stressed layer — devreal.ai

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Magnetoresistive structures with stressed layer

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inventor_of · incomingAnthony Annunziataperson ↗

02

Provenance

Type: patent
Status: Imported / unclaimed
source: bythebay
pdf_url: https://patentimages.storage.googleapis.com/4a/b6/92/0f88195adb55fe/US9653679.pdf
assignee: International Business Machines Corporation
grant_date: 2017-05-16
filing_date: 2016-05-24
patent_number: US9653679B1